Toshiba Memory Europe GmbH (TME) today announced the launch of its latest storage class memory (SCM) solution, XL-FLASH. Based on the company’s BiCS FLASH 3D flash memory technology, with 1bit-per-cell SLC, XL-FLASH brings low latency and high performance to data centre and enterprise storage.
Classified as SCM (or persistent memory), with the ability to retain its contents similar to NAND flash memory, XL-FLASH bridges the performance gap that exists between DRAM and NAND. While volatile memory solutions such as DRAM provide the access speed needed by demanding applications, that performance comes at a high cost. As the cost-per-bit and scalability of DRAM levels off, this new SCM layer in the memory hierarchy addresses that issue with a high density, cost effective, non-volatile NAND flash memory solution. Poised for growth, industry analyst firm IDC estimates the SCM market will reach in excess of $3bn in 2022.
“XL-FLASH is the highest performing NAND available, thanks to our BiCS FLASH – used in SLC mode,” believes Axel Stoermann, VP, Toshiba Memory Europe GmbH: “By only storing one-bit per cell, we’re able to greatly increase performance. And, because XL-FLASH is based on proven technologies that we already mass produce, our customers will be able to accelerate time to market with adoption of XL-FLASH as a Storage Class Memory solution.”
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