New N-channel enhancement-mode power MOSFETs have been developed by Advanced Power Electronics Corp. (USA), claimed to offer a fast switching performance and very low on-resistance.
The AP99T03GS-HF-3 MOSFET comes in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. Devices are well-suited for low voltage applications such as DC/DC converters, and are also available as the AP99T03GP-HF-3 in a TO-220 through-hole package which is ideal for applications where a small PCB footprint or an attached heatsink is required.
The company adds that both new MOSFETs benefit from simple drive requirements and offer a fast switching performance, very low on-resistance of only 2.5mO, a drain-source breakdown voltage of 30V, and a continuous drain current of 120A. The components are halogen-free and fully RoHS-compliant.
Advanced Power Electronics Corp. (USA)
http://www.a-powerusa.com/docs/AP99T03GPS-3.pdf
