New extensions have been added to Snopsys, Inc.’s open source-licensed Interconnect Technology Format (ITF) which enables Modelling of more complex device structures and interconnect layers for parasitic extraction tools at 28 nm and below process technologies.

The company collaborated with the members of the Interconnect Modelling Technical Advisory Board (IMTAB) of the IEEE Industry Standards and Technology Organisation (IEEE-ISTO) to define these new extensions, which have been ratified by IMTAB members including Altera Corporation, AMD, Apache Design Solutions, GLOBALFOUNDRIES, LSI Corporation, Magma Design Automation, NVIDIA, Qualcomm, STMicroelectronics and Synopsys.

The new IMTAB ratified extensions to ITF include:

• Device conductor layer type specification to define a conductor’s function based on the geometric characteristics

• High-k gate oxide thickness and dielectric constant specification for accurate capacitance calculation

• 2 dimensional table to model rectangular via etch as a function of length and width

• Area-dependent temperature coefficient table for accurate via resistance calculation

• Model format to describe through-silicon via (TSV) for on-chip extraction.