Cissoid’s new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform offers an all-in-one solution, its SiC MOSFET possessing water cooling capabilities and built-in gate drivers.
Co-optimising the electrical, mechanical and thermal design of the power module and its proximity control, this new scalable platform will improve time-to-market for Electric Car OEMs and electric motor manufacturers willing to rapidly adopt SiC-based inverters for more efficient and compact motor drives.
The first product out of this scalable platform, it features low conduction losses, with 3.25mOhms On resistance, and low switching losses, with respectively 8.3mJ turn-on and 11.2mJ turn-off energies at 600V/300A. It reduces losses by at least a factor 3, with respect to state-of-the-art IGBT power modules. The new module is water-cooled through a lightweight AlSiC pin-fin baseplate for a junction-to-fluid thermal resistance of 0.15 degrees Celsius/W. The power module is rated for junction temperature up to 175 degrees Celsius. The IPM withstands isolation voltages up to 3600V (50Hz, one minute).
The built-in gate driver includes three on-board isolated power supplies (one per phase), with each delivering up to 5W, allowing the power module to drive up to 25KHz, and at ambient temperatures up to 125 degrees Celsius. Peak gate current up to 10A and immunity to high dV/dt (>50KV/µs) enable fast switching of the power module and low switching losses. Protection functions, such as Undervoltage Lockout (UVLO), Active Miller Clamping (AMC), Desaturation Detection and Soft-Shut-Down (SSD) ensure the safe drive and reliable operation of the power module in case of fault events.
“Developing and optimising fast-switching SiC Power Modules and driving them reliably remains a challenge” admits Dave Hutton, CEO at CISSOID: “With this new SiC Intelligent Power Module, we are happy to deliver our first IPM samples to early SiC adopters and to support the automotive industry in its transition towards highly efficient E-mobility solutions.”
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