HUBER+SUHNER has announced key additions to its Bias-T product portfolio with two new devices designed for installation close to base receiving stations (BTS) or near to the antenna. Covering the full LTE bandwidth 690 to 2700MHz, these new Bias-T’s inject or extract DC power into or out of coaxial cable with the appropriate DC voltage and current. Although the target applications are LTE installations, these Bias-T devices also support other cellular installations such as GSM and UMTS.
Both the 3410.41.0038 and 3410.41.0039 Bias-T’s have built-in lightning protection and offer guaranteed and stable RF performance and protection even after multiple 20kA (8/20µs) strikes as well as a single strike of 30kA (8/20µs).
They are designed to operate with a DC supply up to 48V at a maximum current of 3.5A. Both devices can handle up to 500W RF CW power and exhibit an excellent PIM performance. They have a robust, Sucoplated brass housing, are IP67 rated and have an operating temperature range of -40°C to +85°C.
