Anvo-Systems Dresden, the specialist for non-volatile memory products, presents the ANV32AA1W serial non-volatile SRAM (nvSRAM) with a high storage capacity of 1 Mb. The nvSRAM has a silicon-oxide-nitride-oxide-silicon (SONOS) flash storage element included with each memory cell. In the event of an unforeseeable operating voltage drop below a defined value, the robust, cost-optimised SONOS technology enables non-volatile storage of all data in less than 15 ms. The non-volatile memory device also provides typical advantages of static random access memories (SRAMs), such as fast access times and unlimited read and write endurance.
The ANV32AA1W serial nvSRAM with double memory architecture is organised as 128 k words of 8 bits each and supports SPI Modes 0 and 3. The high clock rate of 66 MHz is an outstanding feature.
An integrated Power Down functionality (hibernate mode) with a standby current Ihib of less than 1 µA ensures low power consumption of the system. The time to recover from Power Down mode is typically only 60 µs. Unique safety features, such as checksum protected memory accesses (Secure READ and Secure WRITE) as well as Time Monitoring, ensure a high degree of reliability of the nvSRAM.
The ANV32AA1W can be operated with 2.7 V to 3.6 V and comes in 8-pin DFN and 16-pin 169 mil TSSOP packages for commercial and industrial (-40 °C to +85 °C) temperature ranges.
The ANV32AA1W 1 Mb nvSRAM is suitable for applications, like medical devices, industrial automation (for example, motor control and robotics), measurement technology, building automation, smart metering systems and many others.
