A new software version has been released by Agilent Technologies Inc improving the company’s EEsof EDA Advanced Design System software, with this latestADS 2014 version. This platform is claimed to dramatically improve design productivity and efficiency with new technologies and capabilities, with this releae being described as “the most significant ADS release to date”.
The company advises its ADS is leading electronic design automation software for RF, microwave and signal-integrity applications. The ADS 2014 provides users with new technologies, new capabilities and continued enhancements for silicon RFIC, MMIC, RF printed circuit board, and multi-technology RF module design. Features include:
o Automatic electromagnetic (EM) simulation setup and design partitioning, which automates the removal of SMD and IC active devices, and placement of ports, then reconnection of the design 10X+ faster and 20X+ fewer mouse clicks.
o Physical layout-versus-schematic (LVS) with device recognition and an innovative module-level LVS that uncovers multi-technology wiring and pin-swap errors.
o Wireless verification test benches that provide circuit design verification solutions for the newest and most challenging multi-band, wide-bandwidth standards (LTE, LTE-A and 802.11ac) with a dramatically simplified user interface.
o Improved layout interconnect design and editing capabilities, including new power and ground planes with smoothing and thermal relief, new intelligent vias and interconnect routes.
o Controlled Impedance Line Designer for quickly and accurately optimizing stack-up and line geometry for multi-gigabit-per-second chip-to-chip links.
o Silicon RFIC schematic interoperability with Virtuoso for bi-directional schematic interoperability between ADS and Cadence Virtuoso.
o ADS Board Link, the next-generation printed circuit board integration solution for bi-directional transfer of layouts, schematics and libraries between ADS and enterprise PCB tools.
o Simulation support for Agilent’s DynaFET model, an advanced neural network model for III-V FETs (GaAs and GaN), to accurately model the effects of trapping, de-trapping, and self-heating, in a single, global model, valid for all (active) applications, without the need for tuning.
Agilent EEsof EDA Software
